发明名称 |
METHOD OF FABRICATING MEMORY |
摘要 |
A method of fabricating a memory is provided. A substrate comprising a memory region and a periphery region is provided. A plurality of gates is formed on the substrate and a first spacer is formed on a sidewall of each gate, where a plurality of openings is formed between the gates in the memory region. A first material layer formed on the substrate in the memory region covers the gates in the memory region and fills the openings. A process is performed to the periphery region. The first material layer is partially removed to form a first pattern in each opening respectively. A second material layer formed on the substrate covers the memory region and the periphery region to expose the first patterns. The first patterns are removed to form a plurality of contact openings in the second material layer. The contact plugs are formed in the contact openings. |
申请公布号 |
US2011201170(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
US20100705297 |
申请日期 |
2010.02.12 |
申请人 |
WINBOND ELECTRONICS CORP. |
发明人 |
CHIANG LU-PING;LIAO HSIU-HAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|