SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To improve the efficiency of photoelectric conversion in a solid-state image sensor wherein microfabrication of pixels is advanced. SOLUTION: The solid-state imaging device includes a pixel region where pixels comprising a photoelectric conversion part PD and a pixel transistor are two-dimensionally arrayed. The pixel includes an impurity diffusion region FD of a floating diffusion configuration part and a gate electrode 34 of the pixel transistor having a recess 45 where part of the impurity diffusion region FD enters when viewed from the upper surface. COPYRIGHT: (C)2011,JPO&INPIT