| 摘要 |
PROBLEM TO BE SOLVED: To reduce trimming time of a fuse element in a semiconductor memory device. SOLUTION: Memory arrays ARY0, ARY1 respectively include a normal area 108 and a spare area 110. Fuse circuits FS0, FS1 store repair addresses to be used for an access to the spare area 110 among addresses of normal areas 108. Repair determination circuits RJ0, RJ1 are prepared for each of the fuse circuits FS0, FS1. The repair determination circuits RJ0, RJ1 determine whether a specified address is to be repaired or not. According to the determination result, an access control circuit AC specifies an area to be accessed, from the memory arrays ARY0, ARY1. When matching is determined by the repair determination circuit RJ0, the access control circuit AC selects any of the memory array ARY0 or ARY1 in accordance with an external signal CX13T<1:0> which is input to the access control circuit AC, and selects the spare area 110 included in the selected memory array ARY for access. COPYRIGHT: (C)2011,JPO&INPIT
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