| 摘要 |
On a p-type conductive light absorption layer provided by a chalcopyrite structure compound that is layered bridging a pair of backside electrode layers provided on a side of a glass substrate, a light-transmissive n-type buffer layer that forms a p-n junction with the light absorption layer is layered. A light-transmissive transparent electrode layer is layered on the buffer layer to extend from a side of the light absorption layer and the buffer layer to one of the pair of backside electrode layers. The transparent electrode layer is formed in an amorphous film containing indium oxide and zinc oxide as primary components, the transparent electrode layer exhibiting a film stress of ±1×109 Pa or less. A photovoltaic element can be favorably processed without causing cracking and damage even by an easily processable mechanical scribing, so that productivity can be enhanced and yield rate can be improved.
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