THE METHOD OF LOW DIELETRIC CONSTANT FILM USING POLYPHENYLCARBOSILANE AND LOW DIELETRIC CONSTANT FILM THEREBY

摘要

PURPOSE: A method for manufacturing a low dielectric thin film using polyphenylcarbosilane and the low dielectric thin film thereof are provided to obtain a thin film with SiOCH composition by curing and thermally processing a silicon wafer after polyphenylcarbosilane is coated on the silicon wafer through a solution process. CONSTITUTION: Polyphenylcarbosilane solutions with a density of 5 to 30 weight% are made by dissolving polyphenylcarbosilane in organic solvents. The polyphenylcarbosilane solutions are coated on the silicon wafer. A silicon wafer coated with the polyphenylcarbonsilane is cured at 150 to 350 degrees centigrade for 10 minutes to one hour. The cured silicon wafer is thermally processed at 400 to 500 degrees centigrade for 10 minutes to one hour.