| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To secure long-term reliability in a semiconductor device by increasing the bonding strength of an ultrasonic welding portions between external connection terminals and the wiring patterns of an insulating substrate. <P>SOLUTION: Hardness of bonding ends 18c, 20a of the external connection terminals 18, 20 to be bonded to the wiring patterns of the insulating substrate 14 through the use of an ultrasonic welding tool is not lower than 90 in Vickers hardness. In the external connection terminals 18 in which the bonding ends 18c are provided integrally with bars 18a, the bonding ends 18c located substantially in the lengthwise center of the bar 18a are first bonded, and the other bonding ends are bonded alternately in order toward both ends. The hardness of the bonding ends 18c, 20a is increased so that a strength of ultrasonic welding portions is increased. The external connection terminals 18 including the bonding ends 18c are bonded in the order of increasing distance from the central bonding end, so that the displacement of the bonding end 18c in both ends from its regular position can be suppressed, thereby keeping the bonding strength high. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
