| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for forming an oxide film without any dents on an element isolation region. SOLUTION: The method of manufacturing the semiconductor device includes: an opening formation step of forming a mask layer made of a stacked layer on a support substrate 11 and a semiconductor layer 13 including an embedded oxide layer 12 and forming an opening on the mask layer; a trench formation step of forming a trench 19 on the semiconductor layer 13 with the mask layer as a mask; a trench thermal oxidation step of forming a trench oxide film 21 at an exposed part of the semiconductor layer 13 including a trench wall surface; a polysilicon film formation step of forming a polysilicon film including an impurity element within the trench; and a polysilicon thermal oxidation step of forming a cap oxide film on the surface of the polysilicon film by thermally oxidizing a region where the polysilicon film is exposed. In the element isolation region, the polysilicon film is formed. COPYRIGHT: (C)2011,JPO&INPIT
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