| 摘要 |
A semiconductor device structure (10) has a semiconductor die (11) that has a bond pad (14) with a passivation layer (18) surrounding a portion of the bond pad. A nickel layer (16), which is deposited, is on the inner portion. A space (20) is between a sidewall of the nickel layer and the passivation layer and extends to the bond pad. A palladium layer (24') is over the nickel layer and fills the space. The space is initially quite small (20) but is widened (20') by an isotropic etch so that when the palladium layer is deposited, the space (20) is sufficiently large so that the deposition of palladium is able to fill the space (20'). Filling the space results in a structure in which the palladium contacts the nickel layer, the passivation layer and the bond pad. |
