发明名称 |
METHOD OF CHEMICAL MECHANICAL POLISHING TUNGSTEN |
摘要 |
<p>A method of chemical mechanical polishing tungsten is disclosed in which a polishing solution includes an exciting agent and a strong oxidizing agent precursor. The polishing solution further includes an abrasive material, water, a pH modifier and a static etch rate inhibitor. The exciting agent is composed of nonferrous transition element metal salts and peroxides. The strong oxidizing agent precursor is transition metal compounds. The exciting agent in the polishing solution excites the strong oxidizing agent precursor, so that the polishing speed of tungsten is improved.</p> |
申请公布号 |
WO2011097954(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
WO2011CN00205 |
申请日期 |
2011.02.09 |
申请人 |
ANJI MICROELECTRONICS (SHANGHAI) CO., LTD;WANG, CHEN;YU, CHANG;HE, HUAFENG |
发明人 |
WANG, CHEN;YU, CHANG;HE, HUAFENG |
分类号 |
H01L21/304;C09G1/02;C09K3/14;C23F1/26 |
主分类号 |
H01L21/304 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|