| 摘要 |
<p>A device is utilized which is provided with a furnace vessel (100), a water-cooled copper crucible (200) provided inside of the furnace vessel (100), and a support rod (300) supporting a silicon electrode (S). After positioning the silicon electrode (S) in the water-cooled copper crucible (200), leaving open a prescribed interval, the furnace vessel (100) is placed in a vacuum state, and by applying a voltage between the silicon electrode (S) and the water-cooled copper crucible (200), a current passes through and melts the silicon electrode (S). While maintaining the top of the melted silicon (S') in a melted state, the melted silicon (S') is solidified sequentially from the bottom in the cooled water-cooled copper crucible (200).</p> |
