| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve an increase in amount Qs of saturation charges by improving charge transfer from a deep position in a solid-state imaging device. <P>SOLUTION: A solid-state imaging device includes a pixel region in which pixels respectively comprising a photoelectric conversion part and a plurality of pixel transistors are arranged. A transfer transistor of the pixel transistors includes a planar transfer gate electrode 42 formed on the surface of a semiconductor substrate and a vertical transfer gate electrode 43 insulated from the planar transfer gate electrode and vertically embedded into the inside of the semiconductor substrate while penetrating through the planar transfer gate electrode. <P>COPYRIGHT: (C)2011,JPO&INPIT |
