| 摘要 |
PROBLEM TO BE SOLVED: To provide a laminate structure of a semiconductor device as a three-dimensional integrated circuit device structure having a seamless through wiring; and to provide a method for manufacturing the same. SOLUTION: The laminate structure 20 of semiconductor devices is formed of a plurality of semiconductor devices laminated vertically, each semiconductor device including a semiconductor substrate 11 with a semiconductor element and a wiring group connected thereto, a through electrode 6 provided to penetrate in the thickness direction of the semiconductor substrate 11, a recess formed on one side of front and rear surfaces of the semiconductor substrate 11 and a rearrangement wiring 7 formed in the recess and electrically connected to the through electrode 6, wherein either the through electrode 6 or a rearrangement wiring 7 is connected to some wirings of the wiring group. The through electrode 6 of a second semiconductor device 1B and the rearrangement wiring 7 of the first semiconductor device 1A are continuously formed. The through electrode 6 of the second semiconductor device 1B and the through electrode 6 of the first semiconductor device 1A are formed at different positions in plan view. COPYRIGHT: (C)2011,JPO&INPIT |
