发明名称 SUBSTRATE TREATMENT APPARATUS AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus improving its productivity by stably, continuously operating the irradiation of ion beams and raising the operation rate of the apparatus. SOLUTION: The substrate treatment apparatus includes an ion source for irradiating a target with the ion beams, a power source for driving the ion beams, and an overcurrent protection part 59 provided to the power source. The overcurrent protection part is provided with: an overcurrent set value-setting part 62 setting an overcurrent set value; an overcurrent value-determining part 63 for determining an overcurrent state if a current value is the overcurrent set value or more set in the set value-setting part; an overcurrent acceptable time-setting part 64 capable of setting the acceptable time in which the overcurrent state continues; and a determination part 65 for determining the lapse of the overcurrent acceptable time set in the overcurrent acceptable time-setting part. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011157613(A) 申请公布日期 2011.08.18
申请号 JP20100022207 申请日期 2010.02.03
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 MUROBAYASHI MASASUE;NIIMURA NORIHIRO;HARA DAISUKE
分类号 C23C14/34 主分类号 C23C14/34
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