发明名称 METHOD FOR REMOVING PHOTORESIST PATTERN
摘要 Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.
申请公布号 US2011200951(A1) 申请公布日期 2011.08.18
申请号 US201113024678 申请日期 2011.02.10
申请人 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION 发明人 BYUN DONG-JIN;JANG SAM-SEOK;KIM BUM-JOON;JHIN JUNG-GEUN;KIM SANG-IL;LEE DO-HAN
分类号 G03F7/00 主分类号 G03F7/00
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