发明名称 |
METHOD FOR REMOVING PHOTORESIST PATTERN |
摘要 |
Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.
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申请公布号 |
US2011200951(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
US201113024678 |
申请日期 |
2011.02.10 |
申请人 |
KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION |
发明人 |
BYUN DONG-JIN;JANG SAM-SEOK;KIM BUM-JOON;JHIN JUNG-GEUN;KIM SANG-IL;LEE DO-HAN |
分类号 |
G03F7/00 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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