| 摘要 |
Disclosed are a piezoelectric device and a piezoelectric device manufacturing method that reduce the number of etchings and the damage to the piezoelectric thin film resulting from the etchings, and are capable of reducing piezoelectric device manufacturing costs. An etching adjustment layer (90) is formed upon the obverse face of a support layer (40) that is formed upon a support substrate (50). Etchant is poured via etching windows (71, 72), simultaneously forming a hole portion (81), which exposes a portion of a sacrificial layer (30) upon the obverse face side of a piezoelectric thin film (10); and an aperture portion (82), which exposes the etching adjustment layer (90), which has continuity with a lower portion electrode (20), upon the obverse face side of the piezoelectric thin film (10). The sacrificial layer (30) is removed by the etchant being poured via the hole portion (81). A guide wire (63A) is formed that runs from an upper portion electrode (60) toward a bump pad (61A), and a guide wire (63B) is formed that runs from the electroconductive etching adjustment layer (90), which has continuity with the lower portion electrode (20), toward a bump pad (61B). |
