发明名称 |
UNDERLAYER FILM MATERIAL, AND METHOD FOR FORMATION OF MULTILAYER RESIST PATTERN |
摘要 |
<p>Disclosed are: an underlayer film material for use in the formation of a resist underlayer film, which is highly soluble in safe solvents, has excellent etching resistance, and does not substantially cause the production of any sublimation product; and a resist pattern formation method using the underlayer film material. Specifically disclosed are: an underlayer film material comprising a cyclic compound that can have two or more specific structures; and a resist pattern formation method using the underlayer film material.</p> |
申请公布号 |
WO2011099235(A1) |
申请公布日期 |
2011.08.18 |
申请号 |
WO2011JP00228 |
申请日期 |
2011.01.18 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC.;HAYASHI, HIROMI;ECHIGO, MASATOSHI |
发明人 |
HAYASHI, HIROMI;ECHIGO, MASATOSHI |
分类号 |
G03F7/11;H01L21/027;H01L21/3065 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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