发明名称 UNDERLAYER FILM MATERIAL, AND METHOD FOR FORMATION OF MULTILAYER RESIST PATTERN
摘要 <p>Disclosed are: an underlayer film material for use in the formation of a resist underlayer film, which is highly soluble in safe solvents, has excellent etching resistance, and does not substantially cause the production of any sublimation product; and a resist pattern formation method using the underlayer film material. Specifically disclosed are: an underlayer film material comprising a cyclic compound that can have two or more specific structures; and a resist pattern formation method using the underlayer film material.</p>
申请公布号 WO2011099235(A1) 申请公布日期 2011.08.18
申请号 WO2011JP00228 申请日期 2011.01.18
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC.;HAYASHI, HIROMI;ECHIGO, MASATOSHI 发明人 HAYASHI, HIROMI;ECHIGO, MASATOSHI
分类号 G03F7/11;H01L21/027;H01L21/3065 主分类号 G03F7/11
代理机构 代理人
主权项
地址