发明名称 ONE-TIME PROGRAMMABLE MEMORY DEVICE AND METHODS THEREOF
摘要 A portion of a programmable memory device (104) is configured as a one-time programmable (OTP) memory, where in response to a write access to the memory device, a memory controller (118) determines whether the write access is associated with a memory location designated as an OTP memory location (404). If so, the memory controller performs a read of the memory location (408), and allows the write access only if each memory cell of the memory location is in an un-programmed state (410). Thus, only a single write access to an OTP memory location is permitted, and subsequent write attempts are disallowed. Further, to enhance detection of programmed cells, the read of the OTP memory location is performed with a lower read voltage than a read voltage associated with a write access (407) to a non-OTP memory location, thereby improving detection of programmed memory cells in the OTP memory location.
申请公布号 WO2011059645(A3) 申请公布日期 2011.08.18
申请号 WO2010US53205 申请日期 2010.10.19
申请人 FREESCALE SEMICONDUCTOR, INC.;STRAUSS, TIMOTHY, J.;TAYLOR, KELLY, K. 发明人 STRAUSS, TIMOTHY, J.;TAYLOR, KELLY, K.
分类号 G06F13/10;G06F13/14;G11C16/08;G11C16/10 主分类号 G06F13/10
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