| 摘要 |
A gas-sensitive field effect transistor is described which includes a semiconductor substrate having a main substrate surface. The semiconductor substrate has a source region, a gate region, and a drain region. The field effect transistor also includes an insulating layer which has a first main surface facing the main substrate surface, and a second main surface facing away from the main substrate surface. The insulating layer at least partially covers the main substrate surface, and in the area of the gate region has an opening or a region having reduced layer thickness having beveled side walls. An area of the opening in the second main surface is larger than an area of the opening in the first main surface. Lastly, the field effect transistor includes a gate electrode layer which covers at least a partial region of the first main surface of the insulating layer, a region of the beveled side walls of the opening, and an area of the gate region. The gate electrode layer includes a material or a structuring which causes a change in the electrical properties of the gate electrode layer upon contact with a predefined gas. |
