NONVOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF AND MEMORY SYSTEM INCLUDING THE SAME

摘要

PURPOSE: A non-volatile memory device, an operation method thereof, and a memory system are provide to remove a selection string by applying different voltage to the ground lines of a string connected to one bit line. CONSTITUTION: In a non-volatile memory device, an operation method thereof, and a memory system, a first string is connected to a bit line. The ground selection line(GSL1) of the first string is floated. A second string is connected to the bit line. An erase prevention voltage is applied to the ground selection line of the second string. An erase operation voltage is applied to the first and second strings. The erase prevention voltage is higher than the threshold voltage of a ground-selection transistor. The ground-selection transistor is connected to the ground selection line of the second string.