| 摘要 |
A semiconductor device manufacturing method prevents the occurrence of a short-circuit between leads caused by peeling-off of residual resin formed on lead side faces or lead lower portions. A laser beam is radiated a plurality of times from a main surface side of leads and also a plurality of times from a back surface side of the leads to intra-dam resin formed in a dam portion, the dam portion being enclosed with adjacent leads, a dam bar and a sealing body, thereby removing all the intra-dam resin formed on lead side faces and lead lower portions. The laser beam radiation of the intra-dam resin may leave behind a sealing body-side resin portion and a projecting resin portion which projects outwardly from the sealing body.
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