| 摘要 |
<p>PURPOSE: A memory device and a manufacturing method thereof are provided to reduce contact resistance between an electrode film and a silicon diode by forming an electrode film with a compound which consists of metal, silicon, and nitrogen. CONSTITUTION: An electrode film is offered on a silicon diode(22) and contacts with the silicon diode. The electrode film contains metal, silicon, and nitrogen. A resistance alteration film(25) is offered on the lower part of the silicon diode or the electrode film. The silicone concentration of the electrode film is higher on the lower surface than on the upper side. The nitrogen concentration of the electrode film is higher on the upper side than on the lower surface.</p> |
