SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF

摘要

PURPOSE: A semiconductor substrate and a manufacturing method thereof and a semiconductor device and a manufacturing method thereof are provided to improve the radiation characteristic of a laser diode by forming the laser diode in a semiconductor having higher thermal conductivity than that of a sapphire substrate. CONSTITUTION: In a semiconductor substrate and a manufacturing method thereof and a semiconductor device and a manufacturing method thereof, a first semiconductor layer(102) is formed on a first substrate(101). A metallic material layer(103) is formed on the first semiconductor layer by a predetermined pattern. A second semiconductor layer(104) is formed on the semiconductor layer and the metallic material layer. A cavity(102a) is formed on the first semiconductor layer instead of the metallic material layer. A hole is formed in the metallic material layer in forming the second semiconductor layer.