发明名称 |
METHOD OF FORMING SURFACE PATTERN OF SAPHIRE, METHOD OF NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
PURPOSE: A method for forming a sapphire surface pattern, a method for manufacturing a nitride semiconductor light emitting device using the same, and the nitride semiconductor light emitting device are provided to quickly and inexpensively form a sapphire surface pattern, thereby reducing total device processing time and processing costs. CONSTITUTION: A sapphire substrate is prepared. The surface of the sapphire substrate is exposed without an etching mask. A gas of at least one of CI2 and HCL2 is supplied onto the surface of the surface of the sapphire substrate. The surface of the sapphire substrate is etched.
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申请公布号 |
KR20110093007(A) |
申请公布日期 |
2011.08.18 |
申请号 |
KR20100012778 |
申请日期 |
2010.02.11 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
JEAN, JAI WON;KIM, SUNG TAE;KIM, YOUNG SUN;HAN, SANG HEON;KIM, KI SUNG;SOHN, YU RI |
分类号 |
H01L33/22 |
主分类号 |
H01L33/22 |
代理机构 |
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地址 |
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