发明名称 METHOD OF FORMING SURFACE PATTERN OF SAPHIRE, METHOD OF NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 PURPOSE: A method for forming a sapphire surface pattern, a method for manufacturing a nitride semiconductor light emitting device using the same, and the nitride semiconductor light emitting device are provided to quickly and inexpensively form a sapphire surface pattern, thereby reducing total device processing time and processing costs. CONSTITUTION: A sapphire substrate is prepared. The surface of the sapphire substrate is exposed without an etching mask. A gas of at least one of CI2 and HCL2 is supplied onto the surface of the surface of the sapphire substrate. The surface of the sapphire substrate is etched.
申请公布号 KR20110093007(A) 申请公布日期 2011.08.18
申请号 KR20100012778 申请日期 2010.02.11
申请人 SAMSUNG LED CO., LTD. 发明人 JEAN, JAI WON;KIM, SUNG TAE;KIM, YOUNG SUN;HAN, SANG HEON;KIM, KI SUNG;SOHN, YU RI
分类号 H01L33/22 主分类号 H01L33/22
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