MULTI-BIT NONVOLATILE MEMORY DEVICE AND MENUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A multi bit nonvolatile memory device and a manufacturing method thereof are provided to improve reliability by preventing the injection mismatch of electrons and holes through a conductive filament formed on the same location as a resistance change layer. CONSTITUTION: An insulation layer(200) is formed on a semiconductor substrate(100). A charge trapping layer(300) is formed on the insulation layer. A first resistance change layer(400-1) and a second resistance change layer(400-2) are formed on the charge trapping layer. An insulation layer(500) is formed between the first resistance change layer and the second resistance change layer. An electrode layer(600) is formed on the first and second resistance change layers and the insulation layer.