发明名称 |
N-CHANNEL MOSFETS COMPRISING DUAL STRESSORS, AND METHODS FOR FORMING THE SAME |
摘要 |
<p>The present invention relates to a semiconductor device including at least one n-channel field effect transistor (n-FET). Specifically, the n-FET includes first and second patterned stressor layers that both contain a carbon-substituted and tensilely stressed single crystal semiconductor. The first patterned stressor layer has a first carbon concentration and is located in source and drain (S/D) extension regions of the n-FET at a first depth. The second patterned stressor layer has a second, higher carbon concentration and is located in S/D regions of the n-FET at a second, deeper depth. Such an n-FET with the first and second patterned stressor layers of different carbon concentration and different depths provide improved stress profile for enhancing electron mobility in the channel region of the n-FET.</p> |
申请公布号 |
EP2036130(B1) |
申请公布日期 |
2011.08.17 |
申请号 |
EP20070797521 |
申请日期 |
2007.05.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LI, JINGHONG, H.;LIU, YAOCHENG;LUO, ZHIJIONG;MADAN, ANITA;ROVEDO, NIVO |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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