发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for manufacturing a semiconductor device is provided to form an electrode pad or wiring cross a step without disconnection by uniformly forming a Pd layer on the surface of a semiconductor substrate. CONSTITUTION: A semiconductor substrate(16) is immersed in Pd activating solutions with Pd ions. The Pd activating solutions are chloride palladium solutions. A Pd catalyst(30) is attached to the surface of the semiconductor substrate. The semiconductor substrate is immersed in a Pd electroless plating solutions(40). A Pd electroless plating layer(44) is formed on the semiconductor substrate.
申请公布号 KR20110092212(A) 申请公布日期 2011.08.17
申请号 KR20110003794 申请日期 2011.01.14
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 NISHIZAWA KOICHIRO
分类号 H01L21/288 主分类号 H01L21/288
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