PURPOSE: A modulator using a bulk silicon substrate is provided to operates at high speed and widen an operation spectrum band. CONSTITUTION: A bulk silicon substrate(281) includes a trench which is etched with preset width and depth. A lower clad layer is formed in the trench of the bulk silicon substrate. A plurality of light wave guides(210,230,240,260) is formed on the lower clad layer. A phase modulation unit(270) is formed on the lower clad layer and modulates the phase of an optical signal passing through the light wave guide by modulating the refractive index of the light wave guide. An upper clad layer is formed on the phase modulation unit and the plurality of light wave guides.
申请公布号
KR20110092044(A)
申请公布日期
2011.08.17
申请号
KR20100011472
申请日期
2010.02.08
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
SHIN, DONG JAE;NA, KYOUNG WON;SUH, SUNG DONG;HA, KYOUNG HO;KIM, SEONG GU;JI, HO CHUL;JO, EIN SUNG