发明名称 |
Sputtering apparatus and sputtering method |
摘要 |
<p>A film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed, in the case of forming a magnetic field on a processing surface of a substrate (21) and formmg a magnetic film by oblique incidence sputtering by using high discharge power. A sputtering apparatus (1) is provided with: a substrate holder (22) which rotatably holds the substrate (21) in the surface direction of the substrate surface to be processed; a substrate magnetic field forming apparatus (30), which is arranged on the circumference of the substrate (21) and forms a magnetic field on the substrate (21) surface to be processed; a cathode (41) which is arranged diagonally above the substrate (21) and is supplied with discharge power; a position detecting apparatus (23) which detects the rotating position of the substrate (21); and a control apparatus (50) which adjusts the rotating speed of the substrate (21) in accordance with the rotating position detected by the position detecting apparatus (23).</p> |
申请公布号 |
GB2477870(A) |
申请公布日期 |
2011.08.17 |
申请号 |
GB20110005266 |
申请日期 |
2009.09.29 |
申请人 |
CANON ANELVA CORPORATION |
发明人 |
TORU KITADA;NAOKI WATANABE;MOTONOBU NAGAI;MASAHIRO SUENAGA;TAKEO KONNO |
分类号 |
C23C14/35;C23C14/34;C23C14/50;C23C14/54;H01F41/18 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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