SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

There is provided a silicon carbide semiconductor device having excellent electrical characteristics such as channel mobility, and a method for manufacturing the same. A semiconductor device (1) includes a substrate (2) made of silicon carbide and having an off-angle of greater than or equal to 50° and less than or equal to 65° with respect to a surface orientation of {0001}, a p-type layer (4) serving as a semiconductor layer, and an oxide film (8) serving as an insulating film. The p-type layer (4) is formed on the substrate (2) and is made of silicon carbide. The oxide film (8) is formed to contact with a surface of the p-type layer (4). A maximum value of the concentration of nitrogen atoms in a region within 10 nm of an interface between the semiconductor layer and the insulating film (interface between a channel region and the oxide film (8)) is greater than or equal to 1×10 21 cm -3 .