发明名称 |
Methods to make fine patterns by exploiting difference of threshold laser fluence of materials and TFT fabrication methods using the same |
摘要 |
Disclosed are methods of making fine patterns by exploiting difference in threshold laser fluence of materials and a thin film transistor (TFT) fabrication methods using the same, and more particularly, to a method of forming a fine pattern and a method of fabricating a TFT through the same method, in which a plurality of layers different in threshold laser fluence are stacked and then exposed to a laser so that a layer having a low threshold laser fluence can be selectively removed, thereby making fine patterns precisely and forming a cavity of a gate electrode precisely and easily. |
申请公布号 |
GB2466083(B) |
申请公布日期 |
2011.08.17 |
申请号 |
GB20090006956 |
申请日期 |
2009.04.23 |
申请人 |
KOREA INSTITUTE OF MACHINERY & MATERIALS |
发明人 |
DONG-YOUN SHIN;TAIK-MIN LEE;DONG-SOO KIM |
分类号 |
H01L51/00;H01L21/336;H01L51/05 |
主分类号 |
H01L51/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|