发明名称 Method for fabricating a sensor
摘要 A method for fabricating a sensor is disclosed that in one embodiment bonds a first device wafer to an etched second device wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element that is in electrical communication with an outer surface of the sensor through an interconnect embedded in a device layer of the first device wafer. In one embodiment the suspended structure is enclosed by a cap and the sensor is configured to measure absolute pressure.
申请公布号 US7998777(B1) 申请公布日期 2011.08.16
申请号 US20100968346 申请日期 2010.12.15
申请人 GENERAL ELECTRIC COMPANY 发明人 GAMAGE SISIRA KANKANAM;MANTRAVADI NARESH VENKATA
分类号 H01L21/00;G01L9/00 主分类号 H01L21/00
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