发明名称 |
Method for dehydrogenation treatment and method for forming crystalline silicon film |
摘要 |
A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge to the hydrogenated amorphous silicon film for a time period of 1 to 500 ms. The surface of the substrate is heated at a temperature of 1000 to 2000° C. by irradiating the atmospheric thermal plasma discharge.
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申请公布号 |
US7998841(B2) |
申请公布日期 |
2011.08.16 |
申请号 |
US20090397717 |
申请日期 |
2009.03.04 |
申请人 |
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO.,LTD. |
发明人 |
AZUMA KAZUFUMI;SHIRAI HAJIME |
分类号 |
H01L21/36 |
主分类号 |
H01L21/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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