发明名称 Phase memorization for low leakage dielectric films
摘要 Embodiments of a phase-stable amorphous high-&kgr; dielectric layer in a device and methods for forming the phase-stable amorphous high-&kgr; dielectric layer in a device are generally described herein. Other embodiments may be described and claimed.
申请公布号 US7999351(B2) 申请公布日期 2011.08.16
申请号 US20080215322 申请日期 2008.06.25
申请人 INTEL CORPORATION 发明人 METZ MATTHEW;DEWEY GILBERT
分类号 H01L29/92 主分类号 H01L29/92
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