发明名称 |
Phase memorization for low leakage dielectric films |
摘要 |
Embodiments of a phase-stable amorphous high-&kgr; dielectric layer in a device and methods for forming the phase-stable amorphous high-&kgr; dielectric layer in a device are generally described herein. Other embodiments may be described and claimed.
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申请公布号 |
US7999351(B2) |
申请公布日期 |
2011.08.16 |
申请号 |
US20080215322 |
申请日期 |
2008.06.25 |
申请人 |
INTEL CORPORATION |
发明人 |
METZ MATTHEW;DEWEY GILBERT |
分类号 |
H01L29/92 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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