发明名称 Particle reduction in PECVD processes for depositing low-k material by using a plasma assisted post-deposition step
摘要 When forming dielectric materials of reduced dielectric constant in sophisticated metallization systems, the creation of defect particles on the dielectric material may be reduced during a plasma enhanced deposition process by inserting an inert plasma step after the actual deposition step.
申请公布号 US7998882(B2) 申请公布日期 2011.08.16
申请号 US20090491849 申请日期 2009.06.25
申请人 GLOBALFOUNDRIES INC. 发明人 MAYER ULRICH;RUELKE HARTMUT
分类号 H01L21/31;H01L21/469 主分类号 H01L21/31
代理机构 代理人
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