Multilayer wiring structure, semiconductor device, pattern transfer mask and method for manufacturing multilayer wiring structure

摘要

A multilayer interconnection structure according to this invention is applied to a case where a plurality of interconnections are formed at a fine pitch and a via is connected to at least one of the interconnections. In the multilayer interconnection structure, a region facing the via is locally narrowed in at least the interconnection, facing the via, of the interconnections adjacent to the interconnection connected to the via.