发明名称 |
Insulated gate-type semiconductor device having a low concentration diffusion region |
摘要 |
A semiconductor 100 has a P− body region and an N− drift region in the order from an upper surface side thereof. A gate trench and a terminal trench passing through the P− body region are formed. The respective trenches are surrounded with P diffusion regions at the bottom thereof. The gate trench builds a gate electrode therein. A P−− diffusion region, which is in contact with the end portion in a lengthwise direction of the gate trench and is lower in concentration than the P− body region and the P diffusion region, is formed. The P−− diffusion region is depleted prior to the P diffusion region when the gate voltage is off. The P−− diffusion region serves as a hole supply path to the P diffusion region when the gate voltage is on.
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申请公布号 |
US7999312(B2) |
申请公布日期 |
2011.08.16 |
申请号 |
US20070223871 |
申请日期 |
2007.01.26 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
TAKAYA HIDEFUMI;HAMADA KIMIMORI;MIYAGI KYOSUKE |
分类号 |
H01L29/66;H01L21/426;H01L29/732;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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