发明名称 Photomask and pattern formation method using the same
摘要 A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
申请公布号 US7998641(B2) 申请公布日期 2011.08.16
申请号 US20080200478 申请日期 2008.08.28
申请人 PANASONIC CORPORATION 发明人 IRIE SHIGEO;MISAKA AKIO;NONAMI YUJI;NAKAMURA TETSUYA;HARADA CHIKA
分类号 G03F1/29;G03F1/32;G03F1/68;G03F7/00;G03F9/00;H01L21/027 主分类号 G03F1/29
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