发明名称 Method of programming multi-layer chalcogenide devices
摘要 A method of programming a multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. The method includes providing an electrical signal between the two terminals, where the electrical signal alters an electrical characteristic of a layer remote from one of the terminals. In one embodiment, the layer remote from the terminal is a chalcogenide material and the electrical characteristic is resistance. In another embodiment, an electrical characteristic of the layer in contact with the terminal is also altered. The alteration of an electrical characteristic may be caused by a transformation of a chalcogenide material from one structural state to another structural state.
申请公布号 US8000125(B2) 申请公布日期 2011.08.16
申请号 US20080178148 申请日期 2008.07.23
申请人 OVONYX, INC. 发明人 SANDOVAL REGINO;KOSTYLEV SERGEY A.;CZUBATYJ WOLODYMYR;LOWREY TYLER
分类号 G11C11/00 主分类号 G11C11/00
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