发明名称 |
Method of fine patterning semiconductor device |
摘要 |
For integrated circuit fabrication, at least one spacer support structure is formed in a first area over a semiconductor substrate, and a mask material is deposited on exposed surfaces of the spacer support structure and on a second area over the semiconductor substrate. A masking structure is formed on a portion of the mask material in the second area, and the mask material is patterned to form spacers on sidewalls of the spacer support structure and to form a mask pattern under the masking structure. The spacer support structure and the masking structure are comprised of respective high carbon content materials that have been spin-coated and have substantially a same etch selectivity. |
申请公布号 |
US7998357(B2) |
申请公布日期 |
2011.08.16 |
申请号 |
US20080217782 |
申请日期 |
2008.07.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO NAM-MYUN;KIM MYEONG-CHEOL;YI SHI-YONG;SONG YOUNG-HOON;PARK YOUNG-JU |
分类号 |
B44C1/22;C03C15/00;C03C25/68;C23F1/00 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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