PHASE CHANGE RECORDING FILM HAVING HIGH ELECTRICAL RESISTANCE AND SPUTTERING TARGET FOR FORMING PHASE CHANGE RECORDING FILM

摘要

PURPOSE: A phase change recording layer with high electric resistance and a sputtering target for forming the same are provided to reduce the property of a phase change type nonvolatile memory layer and reduce manufacturing costs by reducing a current in a record erasing operation. CONSTITUTION: A phase change recording layer has a variable electric resistance property. The phase change recording layer includes Ge of 17 to 25%, Sb of 17 to 25%, and C of 0.5 to 6%. The rest of the phase change recording layer is made of Te and impurities. The resistivity of the phase change recording layer by is 5 x 10^-2 to 5 x 10^1ΩCm.