GESCHALTETE KAPAZITÄT

摘要

A conductive floating electrode (14) is deposited on a dielectric layer (12) formed at a portion of bottom electrode (11). An armature (13) is positioned near floating electrode to form an overlap which is projected onto bottom electrode along a direction perpendicular to the plane of bottom electrode. An actuation area (28) is formed at a portion of overlap which is not covered by floating electrode. An independent claim is also included for a method of processing a micro electromechanical switchable capacitor.