发明名称 |
METHODE ZUR TRENNUNG VON SUBSTRATEN |
摘要 |
A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness. |
申请公布号 |
AT518242(T) |
申请公布日期 |
2011.08.15 |
申请号 |
AT20050077644T |
申请日期 |
2003.03.06 |
申请人 |
HAMAMATSU PHOTONICS K. K. |
发明人 |
FUJII, YOSHIMARO;FUKUYO, FUMITSUGU;FUKUMITSU, KENSHI;UCHIYAMA, NAOKI |
分类号 |
B23K26/38;H01L21/78;B23K26/00;B23K26/06;B23K26/40;B23K101/40;H01L21/26;H01L21/30;H01L21/301;H01L21/324;H01L21/42;H01L21/46;H01L21/477;H05K3/00 |
主分类号 |
B23K26/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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