发明名称 |
SILICON PRODUCTION WITH A FLUIDIZED BED REACTOR UTILIZING TETRACHLOROSILANE TO REDUCE WALL DEPOSITION |
摘要 |
Silicon deposits are suppressed at the wall of a fluidized bed reactor by a process in which an etching gas is fed near the wall of the reactor. The etching gas includes tetrachlorosilane. A Siemens reactor may be integrated into the process such that the vent gas from the Siemens reactor is used to form a feed gas and/or etching gas fed to the fluidized bed reactor. |
申请公布号 |
KR20110091639(A) |
申请公布日期 |
2011.08.12 |
申请号 |
KR20117002273 |
申请日期 |
2009.10.12 |
申请人 |
HEMLOCK SEMICONDUCTOR CORPORATION |
发明人 |
MOLNAR MICHAEL |
分类号 |
C01B33/035;B01J8/24;C01B33/03;F23C10/20 |
主分类号 |
C01B33/035 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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