Field effect device i.e. FET, has contra-electrode separated from active area by electrically insulating layer, and isolation pattern surrounding active area, where contact of contra-electrode separates source/drain zone from pattern

摘要

The device has a gate electrode (8), and an active area (5) made of a semiconductor material. The active area has source/drain zones arranged on two sides of the gate electrode. A contra-electrode (6) is separated from the active area by an electrically insulating layer (3). An isolation pattern (7) surrounds the active area. A contact (10) of the contra-electrode partly separates one source/drain zone from the isolation pattern. Lateral walls of the contact are covered by an electrically insulating material (11). An independent claim is also included for a method for realizing a field effect device.