| 摘要 |
PURPOSE: A method of manufacturing a conductive wire of a semiconductor memory device is provided to eliminate the bridge phenomenon that conductive wires are connected each other by reducing the top width of a poly silicon pattern, which determines the top width of the conductive wire, by using a spacer and securing an interval between the upper ends of the conductive wires. CONSTITUTION: First poly silicon patterns(105) are formed on a sub layer(101). A space between the first poly silicon patterns are filled with an insulating layer(107). A recess area is formed by etching the top of the first poly silicon patterns. A spacer(111) is formed on the sidewall of the recess area. The recess area is filled with second poly silicon. The metal silicidation process of the second poly silicon is implemented so that a metal silicide pattern is formed.
|
