PHOTODIODE, PHOTODIODE-EQUIPPED DISPLAY DEVICE, AND FABRICATION METHOD THEREFOR

摘要

A photodiode (10) of the present invention has a p-type semiconductor region (11), an i-type semiconductor region (12), and an n-type semiconductor region (13). The channel length “L” of the photodiode (10) is determined by the source wiring films (8) formed by etching. This configuration provides a display device equipped with the plurality of photodiodes (10) having consistent properties.