发明名称 |
POLISHING SYSTEM WITH IN-LINE AND IN-SITU METROLOGY |
摘要 |
A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
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申请公布号 |
US2011195528(A1) |
申请公布日期 |
2011.08.11 |
申请号 |
US201113089189 |
申请日期 |
2011.04.18 |
申请人 |
SWEDEK BOGUSLAW A;ADAMS BRET W;RAJARAM SANJAY;CHAN DAVID A;BIRANG MANOOCHER |
发明人 |
SWEDEK BOGUSLAW A.;ADAMS BRET W.;RAJARAM SANJAY;CHAN DAVID A.;BIRANG MANOOCHER |
分类号 |
H01L21/66;B24B37/04;B24B49/12 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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