METHOD FOR FABRICATING AN INP QUANTUM DOT COATED WITH A II-VI GROUP SHELL

摘要

PURPOSE: A method for fabricating an indium phosphide quantum dot coated with Group II-VI compound shell is provided to improve size uniformity of particles, productivity, and coating uniformity of ZnS shell and to reduce the reaction time. CONSTITUTION: A method for fabricating an indium phosphide quantum dot coated with Group II-VI compound shell comprises (S10) forming an indium phosphide core and (S20) forming a Group II-VI compound semiconductor shell on the surface of the indium phosphide core using a monomolecular precursor which includes Group II elements and includes Group VI elements at the same time and enables the formation the Group II-VI compound by being degraded in the heating to the predetermined temperature or more.