发明名称 SOLID-STATE IMAGE SENSOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a solid-state image sensor that decreases a ripple of spectral response characteristics without increasing an area of a photoelectrically converting part, and enhances the output sensitivity. <P>SOLUTION: A photodiode PD1 has an N type region 13 and a P type region 14, a transparent insulating film 15 having a uniform refractive index is formed on the P type region 14 of a light receiving surface, a photodiode PD2 shares a pixel aperture part, the N type region 13, and the P type region 14 with the photodiode PD1, the photodiode PD2 has the transparent insulating film 15 and a transparent insulating film 16 having a different refractive index from the transparent insulating film 15 on the P type region 14 of the light receiving surface, and a charge readout part 3 is in common connected to the photodiode PD1 and the photodiode PD2. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011155165(A) 申请公布日期 2011.08.11
申请号 JP20100016229 申请日期 2010.01.28
申请人 TOSHIBA CORP 发明人 SAITO HIROYUKI
分类号 H01L27/146;H01L31/10;H04N5/335;H04N9/07 主分类号 H01L27/146
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