| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer and a method of manufacturing the same, wherein diffusion of an impurity of high concentration included in a silicon substrate into an epitaxial layer is suppressed in a heat treatment process for forming a semiconductor device. SOLUTION: The epitaxial wafer 1 has a silicon epitaxial layer 20 of 10<SP>16</SP>atoms/cm<SP>3</SP>order in phosphorous concentration and 0.5 to 20 μm in film thickness, on the silicon substrate 10 of 10<SP>19</SP>atoms/cm<SP>3</SP>order in phosphorous concentration and 0.8×10<SP>18</SP>to 1.3×10<SP>18</SP>atoms/cm<SP>3</SP>in oxygen concentration. COPYRIGHT: (C)2011,JPO&INPIT
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